ALLOS’ low leakage, doping-free 600 V HEMT epiwafer technology is running in parallel on both Aixtron G5 and Veeco K465i at a customer
February 16, 2017
2017-02-16 Press release in English.
2017-02-16 Press release in English.
Dresden, Germany – 16th February 2017 – The latest generation of ALLOS Semiconductors’ high crystal quality GaN-on-Si process achieves excellent isolation without doping. Applying