December 14, 2018

Figure 1: Showing the relationship of critical electric field and dynamic on-resistance (black data points are referred from Würfl et al., IEDM 13-144 (2013))

ALLOS’ customers confirm excellent dynamic Ron performance of carbon-doping free GaN-on-Si

December 14, 2018

Dresden, Germany – 14th December 2018 – Known for causing bad dynamic on-resistance, carbon-doping is uniquely avoided by ALLOS and data available from customers

ALLOS’ customers confirm excellent dynamic R_on performance of carbon-doping free GaN-on-Si

December 14, 2018

2018-12-14 Read and download the original version of this press release here.