LEDinside对ALLOS首席技术官Atsushi Nishikawa博士进行了独家专访，就硅基Micro LED如何影响Micro LED显示器生产的整个供应链，尤其是在成本和良品率方面，进行了交流与讨论。
继Nishikawa博士在TrendForce Micro LED论坛2020的线上演讲后，LEDinside与Nishikawa博士就“在提供合适的Micro LED外延片的情况下，硅半导体行业如何凭借卓越的制造能力节省Micro LED的生产成本，提高其良率”进行了更深层次的交流。ALLOS的200和300mm Micro LED外延片采用1 bin® GaN-on-Si技术，为实现Micro LED的量产的突破性进展解锁了极其重要的一环。
您可以在LEDinside网站上阅读英文或中文(繁体)的独家采访。
若要进入TrendForce Micro LED论坛2020的线上演讲，请点击此链接。
Dresden, Germany / Hsinchu, Taiwan – ALLOS Semiconductors of Germany and Ennostar Corporation of Taiwan today announced a strategic partnership to bring 200 mm GaN-on-Si (gallium nitride on silicon) LED epiwafers for microLED applications into volume production. This collaboration represents a key milestone in establishing a silicon fab-compatible supply chain for microLED products.
ALLOS Semiconductors and Canadian specialty semiconductor and performance materials supplier 5N Plus Inc. have announced the acquisition of the GaN IP portfolio from 5N Plus’ subsidiary AZUR Space Solar Power.
The ALLOS Semiconductors team is very proud to announce that our colleagues Dr. Atsushi Nishikawa and Alexander Loesing are co-authors of a paper published in Appl. Phys. Express that has received an Outstanding Paper Award from the Japanese Society of Applied Physics. Atsushi-san will attend the award ceremony at the 72nd JSAP Spring Meeting 2025, March 14-17 in Tokyo.
