In his analysis for Photonics Spectra, Hank Hogan looks at the challenges of micro LED manufacturing and solutions to overcome the challenges – including ALLOS’ proprietary and patented process for growing gallium nitride (GaN) on large diameter silicon (Si) substrates to address the cost – and with ALLOS’ technology – also the yield challenges.
The full article is available on Photonics Spectra’s websites.
Dresden, Germany / Hsinchu, Taiwan – ALLOS Semiconductors of Germany and Ennostar Corporation of Taiwan today announced a strategic partnership to bring 200 mm GaN-on-Si (gallium nitride on silicon) LED epiwafers for microLED applications into volume production. This collaboration represents a key milestone in establishing a silicon fab-compatible supply chain for microLED products.
ALLOS Semiconductors and Canadian specialty semiconductor and performance materials supplier 5N Plus Inc. have announced the acquisition of the GaN IP portfolio from 5N Plus’ subsidiary AZUR Space Solar Power.
The ALLOS Semiconductors team is very proud to announce that our colleagues Dr. Atsushi Nishikawa and Alexander Loesing are co-authors of a paper published in Appl. Phys. Express that has received an Outstanding Paper Award from the Japanese Society of Applied Physics. Atsushi-san will attend the award ceremony at the 72nd JSAP Spring Meeting 2025, March 14-17 in Tokyo.
