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ALLOS in the press
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March 2021
Micro LEDs for medical applications: ALLOS’ GaN-on-Si epiwafers are used for in-vivo brain/machine interface by Toyohashi University
November 2020
Silicon or sapphire – Which substrate for micro LED displays?
Nitride-based red LED on silicon – Article in LED professional Review
September 2020
独家专访:ALLOS的GaN-on-Si晶圆连结半导体技术与Micro LED显示器生产
Exclusive interview: “ALLOS’ GaN-on-Si Wafer to Connect Semiconductor Technology and Micro LED Display Production”
July 2020
Interview “Mighty Plans For Micro-LEDs”
ALLOS和来自沙特阿拉伯国王阿卜杜拉科技大学(KAUST)的 Ohkawa教授正在开发硅基高能效氮化物红光LED
ALLOS and Prof. Ohkawa from KAUST are working on high efficiency nitride-based red LEDs on silicon
MergerMarket report and interview: ALLOS will reinvest the proceeds of its HPE and RF deal into its core micro LED business
GaN-on-Si expert ALLOS Semiconductors sold its high power electronics and RF business to AZUR SPACE
硅基氮化镓专家ALLOS Semiconductors 将其大功率电子和射频业务出售给 AZUR SPACE
GaN-on-Si-Experte ALLOS Semiconductors verkauft seine Geschäftsfelder für Leistungs- und Hochfrequenzelektronik an AZUR SPACE
June 2020
Alexander Loesing talks at EPIC’s online meeting on micro LED
May 2020
Article at ST magazine: Enabling cost-competitive mass production of micro-LED displays
March 2020
Bringing micro LEDs to the dimensions of the silicon industry with ALLOS’ 200 mm and 300 mm GaN-on-Si epiwafers
利用 ALLOS 的 200 mm 和 300 mm 硅基氮化镓外延片,将 microLED 应用于硅基半导体产业
December 2019
High power electronics without carbon-doping and ALLOS’ strain-engineering approach for super uniformity and high-yield micro LED epiwafers
August 2019
Touch Taiwan: The right strategy to put micro LED epiwafers into mass production
June 2019
ALLOS team celebrates five successful years
May 2019
ALLOS shows super uniform 200 mm micro LED epiwafer at SID Display Week
ALLOS wins CS Award for the second year in a row
April 2019
Update: Meet ALLOS at these industry events in May 2019
March 2019
Photonics Spectra discusses impact of micro LEDs on display industry
February 2019
ALLOS is nominated for CS Award for the fourth time
December 2018
ALLOS’ customers confirm excellent dynamic Ron performance of carbon-doping free GaN-on-Si
November 2018
VEECO and ALLOS technical collaboration acelerates the pace for 200 mm GaN-on-silicon micro LED applications for leading global customers
Veeco 与 ALLOS 以技术合作加快为全球主要客户提供 200 mm 硅基氮化镓 microLED 应用
October 2018
Meet ALLOS’ speakers at upcoming conferences
August 2018
Dr. Nishikawa explains scientific background of ALLOS’ GaN-on-Si performance in invited talk at E-MRS conference
May 2018
LEDinside与德国ALLOS的CEO就microLED的未来前景展开交流
LEDinside talks with ALLOS CEO about the future of micro LED
April 2018
“How can GaN-on-Si compete with SiC in the market for 1200 Volt devices?” – ALLOS presents at CS International conference in Brussels
March 2018
ALLOS wins prestigious CS Industry Award for Substrates and Materials 2018
February 2018
IEMN shows more than 1400 V on ALLOS’ new GaN-on-Si epiwafer product
IEMN 结果显示 ALLOS 新型硅基氮化镓外延片产品具有超过 1400 V 的击穿电压
IEMN 顯示在 ALLOS 的新矽上氮化鎵磊晶圓上超過 1400V 的電壓
January 2018
ALLOS’ Technology Progress is Highlighted by LEDinside Article
Interview of i-Micronews with Veeco’s Christopher Morath and ALLOS’ Alexander Loesing
December 2017
ALLOS’ Dr. Nishikawa talks at SEMICON Japan about the physics and innovative techniques to improve the isolation of GaN-on-Si epiwafer
November 2017
Invitation to present at 1st China International Micro-LED Display Summit in Nanjing
ALLOS speaks at Huawei’s internal ‘Material Forum’ about micro LED display manufacturing challenges
ALLOS’ CTO was panelist at Electronic Material Symposium in Japan
SSL 2017 Beijing: ALLOS unique interlayer design enables strain-free and large-diameter epiwafers without bow and cracks
VEECO and ALLOS Demonstrate Industry-leading 200 mm GaN-on-Si Performance to enable Micro-LED Adoption
维易科(VEECO)和ALLOS展示行业领先的200MM硅基氮化镓性能,推动micro-LED的应用
VEECO和ALLOS演示業界領先的200MM GAN-ON-SILICON性能來實現MICRO-LED的應用
October 2017
“The Right Strategy for Developing GaN Power Electronics” – ALLOS’ CEO Burkhard Slischka talks at SEMI China’s CPSIC 2017 conference in Nanjing
ALLOS’ CTO is invited to give a lecture at Osaka University about history of GaN-on-Si development and its future
July 2017
ICNS 2017: ALLOS explains why carbon-doping is not needed to achieve high isolation in GaN-on-Si
April 2017
ALLOS was invited to talk about micro LEDs at LED Taiwan 2017
February 2017
ALLOS’ low leakage, doping-free 600 V HEMT epiwafer technology is running in parallel on both Aixtron G5 and Veeco K465i at a customer
May 2016
Compound Semiconductor magazine puts „All Eyes on ALLOS“
April 2016
Samsung’s LED strategy – ALLOS comments in CS magazine
ALLOS transferred its GaN-on-Si power semiconductor epiwafer technology to industry leader in less than twelve weeks
March 2016
ALLOS nominated for CS industry award 2016
August 2015
Epistar is pleased with GaN-on-Si epiwafer technology from ALLOS
March 2015
晶元光電取得ALLOS應用於GaN-on-Si的磊晶技術授權
Epistar licenced ALLOS’ GaN-on-Si epiwafer technology
December 2014
Newly founded ALLOS Semiconductors offers AZZURRO patents and technology
Alexander Loesing talks at EPIC’s online meeting on micro LED
ALLOS and Prof. Ohkawa from KAUST are working on high efficiency nitride-based red LEDs on silicon
ALLOS is nominated for CS Award for the fourth time
ALLOS nominated for CS industry award 2016
ALLOS shows super uniform 200 mm micro LED epiwafer at SID Display Week
ALLOS speaks at Huawei’s internal ‘Material Forum’ about micro LED display manufacturing challenges
ALLOS team celebrates five successful years
ALLOS transferred its GaN-on-Si power semiconductor epiwafer technology to industry leader in less than twelve weeks
ALLOS was invited to talk about micro LEDs at LED Taiwan 2017
ALLOS wins CS Award for the second year in a row
ALLOS wins prestigious CS Industry Award for Substrates and Materials 2018
ALLOS’ Technology Progress is Highlighted by LEDinside Article
ALLOS’ CTO is invited to give a lecture at Osaka University about history of GaN-on-Si development and its future
ALLOS’ CTO was panelist at Electronic Material Symposium in Japan
ALLOS’ customers confirm excellent dynamic Ron performance of carbon-doping free GaN-on-Si
ALLOS’ Dr. Nishikawa talks at SEMICON Japan about the physics and innovative techniques to improve the isolation of GaN-on-Si epiwafer
ALLOS’ low leakage, doping-free 600 V HEMT epiwafer technology is running in parallel on both Aixtron G5 and Veeco K465i at a customer
ALLOS和来自沙特阿拉伯国王阿卜杜拉科技大学(KAUST)的 Ohkawa教授正在开发硅基高能效氮化物红光LED
Article at ST magazine: Enabling cost-competitive mass production of micro-LED displays
Bringing micro LEDs to the dimensions of the silicon industry with ALLOS’ 200 mm and 300 mm GaN-on-Si epiwafers
Compound Semiconductor magazine puts „All Eyes on ALLOS“
Dr. Nishikawa explains scientific background of ALLOS’ GaN-on-Si performance in invited talk at E-MRS conference
Epistar is pleased with GaN-on-Si epiwafer technology from ALLOS
Epistar licenced ALLOS’ GaN-on-Si epiwafer technology
Exclusive interview: “ALLOS’ GaN-on-Si Wafer to Connect Semiconductor Technology and Micro LED Display Production”
GaN-on-Si expert ALLOS Semiconductors sold its high power electronics and RF business to AZUR SPACE
GaN-on-Si-Experte ALLOS Semiconductors verkauft seine Geschäftsfelder für Leistungs- und Hochfrequenzelektronik an AZUR SPACE
High power electronics without carbon-doping and ALLOS’ strain-engineering approach for super uniformity and high-yield micro LED epiwafers
ICNS 2017: ALLOS explains why carbon-doping is not needed to achieve high isolation in GaN-on-Si
IEMN shows more than 1400 V on ALLOS’ new GaN-on-Si epiwafer product
IEMN 结果显示 ALLOS 新型硅基氮化镓外延片产品具有超过 1400 V 的击穿电压
IEMN 顯示在 ALLOS 的新矽上氮化鎵磊晶圓上超過 1400V 的電壓
Interview “Mighty Plans For Micro-LEDs”
Interview of i-Micronews with Veeco’s Christopher Morath and ALLOS’ Alexander Loesing
Invitation to present at 1st China International Micro-LED Display Summit in Nanjing
LEDinside talks with ALLOS CEO about the future of micro LED
LEDinside与德国ALLOS的CEO就microLED的未来前景展开交流
Meet ALLOS’ speakers at upcoming conferences
MergerMarket report and interview: ALLOS will reinvest the proceeds of its HPE and RF deal into its core micro LED business
Micro LEDs for medical applications: ALLOS’ GaN-on-Si epiwafers are used for in-vivo brain/machine interface by Toyohashi University
Newly founded ALLOS Semiconductors offers AZZURRO patents and technology
Nitride-based red LED on silicon – Article in LED professional Review
Photonics Spectra discusses impact of micro LEDs on display industry
Samsung’s LED strategy – ALLOS comments in CS magazine
Silicon or sapphire – Which substrate for micro LED displays?
SSL 2017 Beijing: ALLOS unique interlayer design enables strain-free and large-diameter epiwafers without bow and cracks
Touch Taiwan: The right strategy to put micro LED epiwafers into mass production
Update: Meet ALLOS at these industry events in May 2019
VEECO and ALLOS Demonstrate Industry-leading 200 mm GaN-on-Si Performance to enable Micro-LED Adoption
VEECO and ALLOS technical collaboration acelerates the pace for 200 mm GaN-on-silicon micro LED applications for leading global customers
ALLOS in the press
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