Category Archives: News in English

ALLOS Semiconductors Expands Portfolio to Over Fifty Patents by Acquiring GaN IP from AZUR Space

ALLOS Semiconductors and Canadian specialty semiconductor and performance materials supplier 5N Plus Inc. have announced the acquisition of the GaN IP portfolio from 5N Plus’ subsidiary AZUR Space Solar Power. This strategic acquisition includes the buy-back of the GaN-on-Si technology for high power electronics (HPE) applications, which we originally sold to AZUR in 2020, along

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International Attendance in March! Where to meet ALLOS speakers at upcoming conferences

ALLOS is starting strong in the first quarter of 2025 with international appearance as award recipients and invited speakers. March 2025 Meet Dr.  Atsushi Nishikawa at 72nd JSAP Spring Meeting 2025 in Tokyo, Japan. Atsushi-san will attend the award ceremony at the 72nd JSAP Spring Meeting 2025, March 14th to 17th in Tokyo. Together with

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Congrats! Dr. Atsushi Nishikawa and Alexander Loesing received an Outstanding Paper Award

The ALLOS Semiconductors team is very proud to announce that our colleagues Dr. Atsushi Nishikawa and Alexander Loesing are co-authors of a paper published in Appl. Phys. Express that has received an Outstanding Paper Award from the Japanese Society of Applied Physics. Atsushi-san will attend the award ceremony at the 72nd JSAP Spring Meeting 2025,

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Micro LEDs for medical applications: ALLOS’ GaN-on-Si epiwafers are used for in-vivo brain/machine interface by Toyohashi University

The team of Prof. Sekiguchi of Toyohashi University of Technology and ALLOS Semiconductors have engaged to realize high efficiency nitride-based micro LED chips for novel in-vivo neutral application.

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Silicon or sapphire – Which substrate for micro LED displays?

Being invited to present at the 2020 edition of the World Display Industry Conference (2020 WDIC) in Hefei, China, ALLOS’ Alexander Loesing looked at the merits and demerits of sapphire and silicon to tackle the challenges of micro LED production. The presentation is available on our publications site and here.

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Nitride-based red LED on silicon – Article in LED professional Review

ALLOS’ CTO, Dr. Atsushi Nishikawa, and Prof. Kazuhiro Ohkawa of King Abdullah University of Science and Technology (KAUST), Saudi Arabia have published today an article outlining the opportunities for latest nitride-based red LED technologies on a large diameter silicon substrate for low-cost mass manufacturing of micro LED displays. This is a promissing approach to simplify

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Exclusive interview: “ALLOS’ GaN-on-Si Wafer to Connect Semiconductor Technology and Micro LED Display Production”

LEDinside had an exclusive interview with ALLOS’ CTO, Dr. Atsushi Nishikawa about how silicon based micro LEDs influence the entire supply chain for micro LED display production, especially for cost and yield. Following the on-line presentation of Dr. Nishikawa at the TrendForce micro LED Forum 2020, LEDinside talked to Dr. Nishikawa for deepening the understanding

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Interview “Mighty Plans For Micro-LEDs” 

Compound Semiconductors magazine talked to ALLOS’ CMO Alexander Loesing. You can read the interview on CS’ site here.

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ALLOS and Prof. Ohkawa from KAUST are working on high efficiency nitride-based red LEDs on silicon

ALLOS Semiconductors has engaged in a collaboration with Prof. Ohkawa and his team at King Abdullah University of Science and Technology (KAUST) for realizing high efficiency nitride-based red LEDs on large diameter silicon substrates.

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MergerMarket report and interview: ALLOS will reinvest the proceeds of its HPE and RF deal into its core micro LED business

Financial news and M&A intelligence network MergerMarket reported yesterday on ALLOS Semiconductor GmbH’s sale of its HPE and RF businesses to AZUR Space Solar Power GmbH. In an interview with ALLOS’ co-founder and CMO Alexander Loesing MergerMarket journalist Laura Larghi discussed the background of the deal and ALLOS strategy in its core micro LED business.

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