IEMN shows more than 1400 V on ALLOS’ new GaN-on-Si epiwafer product
Villeneuve-d’Ascq, France and Dresden, Germany – 1st February 2018 – Latest results from IEMN show more than 1400 V breakdown voltage for both vertical
Villeneuve-d’Ascq, France and Dresden, Germany – 1st February 2018 – Latest results from IEMN show more than 1400 V breakdown voltage for both vertical
In today’s article “Must Read: Worldwide Micro LED R&D Progress” LEDinside is highlighting ALLOS’ progress in demonstrating uniform 200 mm GaN-on-Si epiwafer for blue
Yole Développement has today published an interview titled “ALLOS-Veeco collaboration enables better GaN-on-silicon microLEDs” with Alexander Loesing, CMO of ALLOS, and Christopher Morath, senior
At this week’s SEMICON Japan industry exhibition ALLOS’ Atsushi Nishikawa was invited to talk about improvements in isolation of GaN-on-Si epiwafer for high-power device
It was a great honor and pleasure for our CMO, Alexander Loesing to be invited to present ALLOS’ latest results on micro LED and
Thank you to the Huawei team for inviting ALLOS’ Burkhard Slischka to speak about micro LED display manufacturing challenges at Huawei‘s internal ‘Material Forum’
The Electronic Material Symposium held this week in Shiga, Japan organized a rump session titled ‘Does your research link with business?’ ALLOS’ CTO Dr.
ALLOS’ CEO Burkhard Slischka talks about ALLOS micro LED strategy at SSL 2017 conference in Beijing Recently, micro LED displays have attracted tremendous attention
Plainview, N.Y., November 1, 2017 – Veeco Instruments Inc. (Nasdaq: VECO) announced today the completion of a strategic initiative with ALLOS Semiconductors (ALLOS) to