Dresden, Germany – 11th April 2016 – ALLOS Semiconductors has transferred its latest generation GaN-on-Si epiwafer technology in less than twelve weeks to a major international industry player. This is part of a comprehensive joint project to accelerate the GaN-on-Si power semiconductor product development of that customer. ALLOS Semiconductors today announced the successful completion of
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ALLOS was nominated for the 2016 Compound Semiconductor Industry Award to acknowledge its achievements in 150 and 200 mm GaN-on-Si epiwafer technology. In the Substrates & Materials Award category ALLOS finished among the top three candidates. The entire ALLOS team is very proud and would like to thank you all for your votes and support.
Hsinchu, Taiwan – 19th August 2015 – The 150 and 200 mm GaN-on-Si epiwafer technology transfer from ALLOS Semiconductors to Epistar was concluded in record time and with industry leading homogeneities and crystal quality. Epistar Corporation and ALLOS Semiconductors today announced the successful conclusion of their project to establish ALLOS’ mature 150 and 200 mm
Hsinchu, Taiwan – 11th March 2015 – Epistar licenced GaN-on-Si technology from ALLOS Semiconductors and concluded the first phases of the technology transfer successfully. Leading LED maker Epistar Corporation, Taiwan and the engineering and consulting company ALLOS Semiconductors, Germany announced today that Epistar licensed ALLOS’ unique gallium nitride on silicon (GaN-on-Si) technology and that the
Dresden, Germany – 15th December 2014 – GaN-on-Si technology expert ALLOS Semiconductors, founded little more than six months ago, announced today that it has acquired the exclusive ownership of all technology, know-how and intellectual property of former AZZURRO Semiconductors. ALLOS Semiconductors GmbH, who is specialised in GaN-on-Si technology and markets, provides engineering and consulting services