A big surprise hit us this Friday and caused cheer and celebration in the ALLOS team: We won this year’s prestigious Compound Semiconductor Industry
Villeneuve-d’Ascq, France and Dresden, Germany – 1st February 2018 – Latest results from IEMN show more than 1400 V breakdown voltage for both vertical
法国阿斯克新城和德国德累斯顿 – 2018 年 2 月 1 日 – 来自电子、微电子及纳米技术研究院 (IEMN) 的最新结果显示，ALLOS 即将推出的适用于 1200 V 器件的硅基氮化镓外延片产品具有超过 1400 V 的纵向和横向击穿电压。 法国 IEMN 研究所的 Farid Medjdoub
法國阿斯克新城和德國德勒斯登– 2018 年 2 月 1 日 – 來自 IEMN 最新的結果顯示，ALLOS 即將推出用於 1200V 裝置的矽上氮化鎵磊晶圓產品，其崩潰電壓之縱向和橫向量測均超過 1400V。 由法國 IEMN 研究中心 Farid Medjdoub 博士所組成的研究團隊，運用了德國 ALLOS Semiconductors 所提供的兩種不同矽上氮化鎵磊晶圓來製作裝置並進行量測。其中之一是
In today’s article “Must Read: Worldwide Micro LED R&D Progress” LEDinside is highlighting ALLOS’ progress in demonstrating uniform 200 mm GaN-on-Si epiwafer for blue
Yole Développement has today published an interview titled “ALLOS-Veeco collaboration enables better GaN-on-silicon microLEDs” with Alexander Loesing, CMO of ALLOS, and Christopher Morath, senior
At this week’s SEMICON Japan industry exhibition ALLOS’ Atsushi Nishikawa was invited to talk about improvements in isolation of GaN-on-Si epiwafer for high-power device
It was a great honor and pleasure for our CMO, Alexander Loesing to be invited to present ALLOS’ latest results on micro LED and
Thank you to the Huawei team for inviting ALLOS’ Burkhard Slischka to speak about micro LED display manufacturing challenges at Huawei‘s internal ‘Material Forum’
