ALLOS shows super uniform 200 mm micro LED epiwafer at SID Display Week

The team of ALLOS felt honored to have
the privilege of discussing ALLOS’ technology for super uniform, high-yielding
200 mm GaN-on-Si at SID Display Week. Our thanks to SID for the invitation! We
are delighted by the overwhelming feedback and inspired by the many fascinating
prototypes and concepts for micro LEDs, which have been shown in San Jose.
Here’s to the upcoming micro LED display revolution! Let’s continue to work
together to make it a mass market reality!

Illustration shows the contious improvement of emmision wavelength uniformity to achieve 1 bin®

For more information how ALLOS can assist your micro LED work or to receive a personal copy of the presentation, please contact our sales team at sales@allos-semiconductors.com or give us a call at +49-351-212 937-21. Follow us on Linkedin to stay ahead on any updates.

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Dresden, Germany / Hsinchu, Taiwan – ALLOS Semiconductors of Germany and Ennostar Corporation of Taiwan today announced a strategic partnership to bring 200 mm GaN-on-Si (gallium nitride on silicon) LED epiwafers for microLED applications into volume production. This collaboration represents a key milestone in establishing a silicon fab-compatible supply chain for microLED products.

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Congrats! Dr. Atsushi Nishikawa and Alexander Loesing received an Outstanding Paper Award

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The ALLOS Semiconductors team is very proud to announce that our colleagues Dr. Atsushi Nishikawa and Alexander Loesing are co-authors of a paper published in Appl. Phys. Express that has received an Outstanding Paper Award from the Japanese Society of Applied Physics. Atsushi-san will attend the award ceremony at the 72nd JSAP Spring Meeting 2025, March 14-17 in Tokyo.