LEDinside’s Eva Huang interviewed ALLOS’ CEO Burkhard Slischka about the challenges for the upcoming micro LED market. ALLOS sees GaN-on-Si as a key enabler to achieve the needed cost and yield improvements. To underpin this, the interview covered key issues like wafer uniformity, the usage of CMOS lines, the possibility of 300 mm GaN-on-Si and the performance comparison between on-sapphire and on-silicon LED wafers. You can read the full interview here.
LEDinside and affiliated Taiwan-based market intelligence provider Trendforce are top addresses in the LED industry and we were happy to share with their broad audience.
Translated versions of the interview are available in simplified and in traditional Chinese on LEDinside’s respective websites.
