News

ALLOS Semiconductors Expands Portfolio to Over Fifty Patents by Acquiring GaN IP from AZUR Space

ALLOS Semiconductors and Canadian specialty semiconductor and performance materials supplier 5N Plus Inc. have announced the acquisition of the GaN IP portfolio from 5N Plus’ subsidiary AZUR Space Solar Power. This strategic acquisition includes the buy-back of the GaN-on-Si technology for high power electronics (HPE) applications, which we originally sold to AZUR in 2020, along

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International Attendance in March! Where to meet ALLOS speakers at upcoming conferences

ALLOS is starting strong in the first quarter of 2025 with international appearance as award recipients and invited speakers. March 2025 Meet Dr.  Atsushi Nishikawa at 72nd JSAP Spring Meeting 2025 in Tokyo, Japan. Atsushi-san will attend the award ceremony at the 72nd JSAP Spring Meeting 2025, March 14th to 17th in Tokyo. Together with

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Congrats! Dr. Atsushi Nishikawa and Alexander Loesing received an Outstanding Paper Award

The ALLOS Semiconductors team is very proud to announce that our colleagues Dr. Atsushi Nishikawa and Alexander Loesing are co-authors of a paper published in Appl. Phys. Express that has received an Outstanding Paper Award from the Japanese Society of Applied Physics. Atsushi-san will attend the award ceremony at the 72nd JSAP Spring Meeting 2025,

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Micro LEDs for medical applications: ALLOS’ GaN-on-Si epiwafers are used for in-vivo brain/machine interface by Toyohashi University

The team of Prof. Sekiguchi of Toyohashi University of Technology and ALLOS Semiconductors have engaged to realize high efficiency nitride-based micro LED chips for novel in-vivo neutral application.

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Silicon or sapphire – Which substrate for micro LED displays?

Being invited to present at the 2020 edition of the World Display Industry Conference (2020 WDIC) in Hefei, China, ALLOS’ Alexander Loesing looked at the merits and demerits of sapphire and silicon to tackle the challenges of micro LED production. The presentation is available on our publications site and here.

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Nitride-based red LED on silicon – Article in LED professional Review

ALLOS’ CTO, Dr. Atsushi Nishikawa, and Prof. Kazuhiro Ohkawa of King Abdullah University of Science and Technology (KAUST), Saudi Arabia have published today an article outlining the opportunities for latest nitride-based red LED technologies on a large diameter silicon substrate for low-cost mass manufacturing of micro LED displays. This is a promissing approach to simplify

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独家专访:ALLOS的GaN-on-Si晶圆连结半导体技术与Micro LED显示器生产

LEDinside对ALLOS首席技术官Atsushi Nishikawa博士进行了独家专访,就硅基Micro LED如何影响Micro LED显示器生产的整个供应链,尤其是在成本和良品率方面,进行了交流与讨论。

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Exclusive interview: “ALLOS’ GaN-on-Si Wafer to Connect Semiconductor Technology and Micro LED Display Production”

LEDinside had an exclusive interview with ALLOS’ CTO, Dr. Atsushi Nishikawa about how silicon based micro LEDs influence the entire supply chain for micro LED display production, especially for cost and yield. Following the on-line presentation of Dr. Nishikawa at the TrendForce micro LED Forum 2020, LEDinside talked to Dr. Nishikawa for deepening the understanding

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Interview “Mighty Plans For Micro-LEDs” 

Compound Semiconductors magazine talked to ALLOS’ CMO Alexander Loesing. You can read the interview on CS’ site here.

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ALLOS和来自沙特阿拉伯国王阿卜杜拉科技大学(KAUST)的 Ohkawa教授正在开发硅基高能效氮化物红光LED

德国德累斯顿– 2020年7月21日- ALLOS半导体公司与阿卜杜拉国王科技大学(KAUST)的Ohkawa教授及其团队合作,希望在大直径硅衬底上实现高能效氮化物红光LED。

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