ALLOS Semiconductors has engaged in a collaboration with Prof. Ohkawa and his team at King Abdullah University of Science and Technology (KAUST) for realizing high efficiency nitride-based red LEDs on large diameter silicon substrates.
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Financial news and M&A intelligence network MergerMarket reported yesterday on ALLOS Semiconductor GmbH’s sale of its HPE and RF businesses to AZUR Space Solar Power GmbH. In an interview with ALLOS’ co-founder and CMO Alexander Loesing MergerMarket journalist Laura Larghi discussed the background of the deal and ALLOS strategy in its core micro LED business.
Joint press release: The leading provider of III-V epitaxy for solar cells AZUR SPACE and GaN-on-Si epiwafer expert ALLOS Semiconductors have announced that AZUR SPACE has acquired the electronics business of ALLOS Semiconductors. AZUR SPACE will use the acquired technology to expand its III-V epi business into the booming market for GaN-on-Si high power electronics and RF epiwafers. ALLOS Semiconductors will continue its optoelectronics business with the focus on the emerging micro LED display market.
德国，海尔布隆和德累斯顿- 2020年7月8日- 光伏电池III-V族外延片供应商AZUR SPACE和硅基氮化镓外延片专家ALLOS Semiconductors 共同宣布， AZUR SPACE已收购ALLOS Semiconductors 的电子业务。AZUR SPACE将利用收购的技术将其III-V 族外延片业务扩展到蓬勃发展的硅基氮化镓高功率电子和射频外延片市场。ALLOS Semiconductors 将继续开展其光电子业务，并聚焦于新兴Micro LED显示屏市场。
Gemeinsame Presseerklärung: Der führende Anbieter von III-V-Epitaxie für Solarzellen, AZUR SPACE und der Experte für GaN-on-Si-Epiwafer, ALLOS Semiconductors geben bekannt, dass AZUR SPACE die Leistungs- und Hochfrequenzelektronik-Geschäftsfelder von ALLOS Semiconductors übernimmt. AZUR SPACE wird die erworbene Technologie nutzen, um sein III‑V‑Epitaxie-Geschäft auf den boomenden GaN-on-Si-Markt für Leistungselektronik und Hochfrequenzelektronik auszuweiten. ALLOS Semiconductors wird sein Optoelektronik-Geschäft mit Fokus auf dem wachsenden Markt für micro LED-Displays fortsetzen.
ALLOS presented at the online meeting of EPIC about micro LED technology and applications. Watch the video of the talk.
Semiconductor Today magazine invited ALLOS to share its vision how to enable the mass production of high-performant, low-cost, energy-efficient micro LED displays.
Press release: To address the wafer size mismatch and to tackle the yield challenge in micro LED production, ALLOS has applied its unique strain-engineering to show outstanding uniformity and reproducibility for 200 mm GaN-on-Si epiwafers. Additionally the company reports about its success on the roadmap to 300 mm.
德国德累斯顿 – 2020 年 3 月 30 日 – 为了解决晶片尺寸不匹配的问题并应对 microLED 生产产量方面的挑战，ALLOS 应用其独特的应变工程技术，展示了 200 mm 硅基氮化镓 (GaN-on-Si) 外延片的出色一致性和可重复性。此外，公司还报告了其 300 mm 外延片的成功发展蓝图。
We have been very pleased to be invited again to present at the joint conference SSL China and IFWS. At IFWS we had the opportunity to talk about the benefits of our unique approach to avoid carbon-doping in GaN-on-Si for high power electronics and instead work to achieve extra-ordinary good crystal quality. During SSL China