High power electronics without carbon-doping and ALLOS’ strain-engineering approach for super uniformity and high-yield micro LED epiwafers

ALLOS’ CTO Dr. Atsushi Nishikawa at IFWS 2019

We have been very pleased to be invited again to present at the joint conference SSL China and IFWS. At IFWS we had the opportunity to talk about the benefits of our unique approach to avoid carbon-doping in GaN-on-Si for high power electronics and instead work to achieve extra-ordinary good crystal quality. During SSL China we presented about our 1 bin® micro LED technology being ready for production.

For more information how ALLOS can assist your micro LED work or to receive a personal copy of the presentation, please contact our sales team at sales@allos-semiconductors.com or give us a call at +49-351-212 937-21.

More News

ALLOS and Ennostar Forge Strategic Partnership to Launch 200 mm Supply Chain for MicroLEDs

January 19, 2026

Dresden, Germany / Hsinchu, Taiwan – ALLOS Semiconductors of Germany and Ennostar Corporation of Taiwan today announced a strategic partnership to bring 200 mm GaN-on-Si (gallium nitride on silicon) LED epiwafers for microLED applications into volume production. This collaboration represents a key milestone in establishing a silicon fab-compatible supply chain for microLED products.

ALLOS Semiconductors Expands Portfolio to Over Fifty Patents by Acquiring GaN IP from AZUR Space

March 6, 2025

ALLOS Semiconductors and Canadian specialty semiconductor and performance materials supplier 5N Plus Inc. have announced the acquisition of the GaN IP portfolio from 5N Plus’ subsidiary AZUR Space Solar Power.

Congrats! Dr. Atsushi Nishikawa and Alexander Loesing received an Outstanding Paper Award

February 20, 2025

The ALLOS Semiconductors team is very proud to announce that our colleagues Dr. Atsushi Nishikawa and Alexander Loesing are co-authors of a paper published in Appl. Phys. Express that has received an Outstanding Paper Award from the Japanese Society of Applied Physics. Atsushi-san will attend the award ceremony at the 72nd JSAP Spring Meeting 2025, March 14-17 in Tokyo.