Samsung’s LED strategy – ALLOS comments in CS magazine

ALLOS brand pattern

Will Samsung transform and conquer the LED industry with disruptive GaN-on-Si technology? Compound Semiconductor magazine gave ALLOS the opportunity to comment on the situation. Read the article in today’s issue of CS magazine or download your copy here.

Background: In the March issue of CS magazine Samsung published an article about its GaN-on-Si LED technology in which it claimed to have achieved excellent LED properties as well as having a cost saving potential of 60%. You can read Samsung’s article on CS‘ website here (registration might be required).

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ALLOS Semiconductors and Ennostar announce strategic partnership

ALLOS and Ennostar Forge Strategic Partnership to Launch 200 mm Supply Chain for MicroLEDs

Dresden, Germany / Hsinchu, Taiwan – ALLOS Semiconductors of Germany and Ennostar Corporation of Taiwan today announced a strategic partnership to bring 200 mm GaN-on-Si (gallium nitride on silicon) LED epiwafers for microLED applications into volume production. This collaboration represents a key milestone in establishing a silicon fab-compatible supply chain for microLED products.

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