Based on a background talk with ALLOS’ CEO Burkhard Slischka and her own research Rebecca Pool of Compound Semiconductor magazine published an article named „All Eyes on ALLOS“. It looks at the latest GaN-on-silicon developments and ALLOS’ role in the industry. It is available free of charge on CS‘ website here (registration might be required).
Dresden, Germany / Hsinchu, Taiwan – ALLOS Semiconductors of Germany and Ennostar Corporation of Taiwan today announced a strategic partnership to bring 200 mm GaN-on-Si (gallium nitride on silicon) LED epiwafers for microLED applications into volume production. This collaboration represents a key milestone in establishing a silicon fab-compatible supply chain for microLED products.
ALLOS Semiconductors and Canadian specialty semiconductor and performance materials supplier 5N Plus Inc. have announced the acquisition of the GaN IP portfolio from 5N Plus’ subsidiary AZUR Space Solar Power.
The ALLOS Semiconductors team is very proud to announce that our colleagues Dr. Atsushi Nishikawa and Alexander Loesing are co-authors of a paper published in Appl. Phys. Express that has received an Outstanding Paper Award from the Japanese Society of Applied Physics. Atsushi-san will attend the award ceremony at the 72nd JSAP Spring Meeting 2025, March 14-17 in Tokyo.
