Bringing micro LEDs to the dimensions of the silicon industry with ALLOS’ 200 mm and 300 mm GaN-on-Si epiwafers
Dresden, Germany – 30th March 2020 – To address the wafer size mismatch and to tackle the yield challenge in micro LED production, ALLOS
Dresden, Germany – 30th March 2020 – To address the wafer size mismatch and to tackle the yield challenge in micro LED production, ALLOS
德国德累斯顿 – 2020 年 3 月 30 日 – 为了解决晶片尺寸不匹配的问题并应对 microLED 生产良率方面的挑战,ALLOS 应用其独特的应变工程技术,展示了 200 mm 硅基氮化镓 (GaN-on-Si) 外延片的出色一致性和可重复性。此外,公司还报道了其在 300 mm 外延片方面所取得的成功。 良率对于 microLED 显示屏的成功起着至关重要的作用。它会直接影响生产的复杂性和成本。为了降低所需的生产成本,大尺寸晶圆十分重要。这对于
ALLOS’ CTO Dr. Atsushi Nishikawa at IFWS 2019 We have been very pleased to be invited again to present at the joint conference SSL
Thank you, 謝謝, and herzlichen Dank to the Taiwan Display Union Association for the invitation to talk at Touch Taiwan‘s „International Micro LED Display
Today, five years ago, the founders of ALLOS went out to enable its customers to leapfrog the competition by tapping into the 11 years
The team of ALLOS felt honored to have the privilege of discussing ALLOS’ technology for super uniform, high-yielding 200 mm GaN-on-Si at SID Display
Dresden, Germany – 14th May 2019 – After winning already in 2018, the ALLOS team is particularly proud to have again been voted winner
Meet us at Display Week in San Jose and PCIM Nuremberg next month. For more information and constant updates please refer to our Meet
In his analysis for Photonics Spectra, Hank Hogan looks at the challenges of micro LED manufacturing and solutions to overcome the challenges – including